Radiation detecting apparatus and method for manufacturing the same

ABSTRACT

An underlayer of a phosphor layer is disposed on a sensor panel including two-dimensionally arranged photoelectric conversion devices. The surface of the underlayer is subjected to atmospheric pressure plasma treatment. The phosphor layer is formed on the surface-treated underlayer. Then, the phosphor layer is covered with a moisture-resistant protective layer, a reflection layer, and another protective layer. Thus, the phosphor layer is prevented from peeling due to adhesion failure, and is constituted of uniformly shaped crystals by vapor deposition. A resulting radiation detecting apparatus exhibits high sensitivity and high definition, producing a uniform photoelectric conversion efficiency.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a radiation detecting apparatusfor detecting radiation, and in particular, a radiation apparatus usedin medical apparatuses, non-destructive examination apparatuses, and thelike, and to a method for manufacturing the same. The radiation hereinincludes α-rays, β-rays, and electromagnetic waves, such as X-rays andγ-rays.

[0003] 2. Description of the Related Art

[0004] In the field of X-ray radiography, X-ray film systems havegenerally been applied which use a double-coated film and a fluorescentscreen containing a phosphor layer. In addition, digital radiationdetecting apparatuses have been used because they provide superior imagecharacteristics and allow data to be captured into a networked computersystem for sharing.

[0005] Among these digital radiation detecting apparatuses arehigh-sensitive, high-definition apparatuses, as disclosed in U.S. Pat.No. 6,262,422 and U.S. Pat. No. 6,469,305. Such radiation detectingapparatuses include: a photo-detector including two-dimensionallyarranged photoelectric conversion devices, each conversion deviceincluding a photosensor and a thin-film transistor (TFT); and a phosphorlayer for converting incident radiation into light capable of beingsensed by the photoelectric conversion device. The two-dimensionalphoto-detector is covered with a protective layer for protecting thestiffness of the photoelectric conversion devices. In addition,moisture-resistant protective layers are provided between the phosphorlayer and a reflection layer, and over the phosphor layer so as to coverthe entire phosphor layer. A resin coat is further applied to the endsof the moisture-resistant protective layers. The moisture-resistantprotective layers and resin coat prevent external water from permeatingfrom the ends of the radiation detecting apparatus and enhance itsdurability.

[0006] The layers of the scintillator panel of a radiation detectingapparatus, such as a reflection layer, a protective layer, and aninsulting layer, are formed of materials having largely differentthermal expansion coefficients from each other. For example, amorphouscarbon and glass have a thermal expansion coefficient in the range of 1to 10×10⁻⁶/° C.; metals such as Al, in the range of 15 to 25×10⁻⁶/° C.;and common resins, in the range of 1 to 5×10⁻⁵/° C. Accordingly, thedifference in displacement by a heat and humidity test among the layersis large. In order to enhance the durability of a radiation detectingapparatus, it is therefore important to increase adhesion between thelayers so as to withstand displacement of each layer due to externalinfluences, as well as to enhance moisture resistance. Theabove-described radiation detecting apparatuses have the followingproblems:

[0007] First, the phosphor layer may be broken or peeled from anunderlayer, a protective layer of the phosphor layer overlying thephotoelectric conversion devices, by a heat and humidity test becausethe adhesion between the phosphor layer and the underlayer is low.

[0008] Second, in connection with a corona discharge treatment, which isa common surface treatment for enhancing the adhesion of the underlayerto the phosphor layer, when the corona discharge treatment is applied tothe underlayer overlying the photoelectric conversion devices of thesensor panel, current of the photoelectric conversion devices is likelyto vary when the TFTs are in an off state, or when a wire of thephotoelectric conversion devices is broken. Thus, it has been impossibleto reform the surface of the underlayer without damaging the sensorpanel.

[0009] An alternative to corona discharge treatment is vacuum plasmatreatment, which produces the same results as corona dischargetreatment. However, vacuum plasma treatment takes a long time and itsprocess is complicated because it is performed under a high vacuum, andis thus undesirable.

SUMMARY OF THE INVENTION

[0010] Accordingly, an object of the present invention is to provide ahigh-sensitive, high-definition radiation detecting apparatus exhibitinguniform optical conversion efficiency whose phosphor layer is formed byvapor deposition so as to form uniform, highly precise columnar crystalsand is prevented from peeling due to adhesion failure.

[0011] According to one aspect, the present invention manufactures aradiation detecting apparatus by applying atmospheric pressure plasmatreatment to a surface of an underlayer which is provided on the sensorpanel, and forming a phosphor layer on the surface of the underlayer.

[0012] In another aspect, the present invention manufactures a radiationdetecting apparatus by forming an underlayer over a substrate andapplying atmospheric pressure plasma treatment to a surface of theunderlayer, forming the phosphor layer on the surface of the underlayerto prepare a scintillator panel, and bonding a sensor panel includingtwo-dimensionally arranged photoelectric conversion devices to thescintillator panel.

[0013] In yet another aspect of the present invention, a radiationdetecting apparatus comprises a sensor panel having two-dimensionallyarranged photoelectric conversion devices, an underlayer disposed on thesensor panel, wherein the underlayer has a surface subjected toatmospheric pressure plasma treatment, and a phosphor layer disposed onthe underlayer. Preferably, the radiation detecting apparatus furthercomprises a moisture-resistant protective layer between the phosphorlayer and a reflection layer. The moisture-resistant protective layerprevents constituents and water in the phosphor layer from negativelyaffecting the reflection layer. Preferably, another protective layer isprovided on the reflection layer so as to cover the entirety of thephosphor layer, and to protect the phosphor layer and the reflectionlayer from external water. Furthermore, the ends of these protectivelayers are preferably covered with a resin coat to prevent water frompermeating from the ends of the radiation detecting apparatus.

[0014] In yet another aspect of the present invention, a radiationdetecting apparatus includes a sensor panel having the two-dimensionallyarranged photoelectric conversion devices and a scintillator panelhaving a phosphor layer lying on a surface of an underlayer subjected toatmospheric pressure plasma treatment. The sensor panel and thescintillator panel are bonded together with an adhesion layer.

[0015] In yet another aspect, the present invention manufactures ascintillator panel by applying atmospheric pressure plasma treatment toa surface of an underlayer which is provided over a substrate, andforming a phosphor layer on the underlayer. The scintillator panelincludes the phosphor layer on the surface of the underlayer subjectedto atmospheric pressure plasma treatment over the substrate.

[0016] Preferably, the surface of the underlayer subjected to theatmospheric pressure plasma treatment has a surface energy of 45×10⁻³J/m² or more. A columnar crystalline phosphor is vapor-deposited on thisunderlayer to form the phosphor layer.

[0017] The present invention's use of atmospheric pressure plasmatreatment on the underlayer of the phosphor layer enhances the adhesionof the underlayer to the phosphor layer, wherein the phosphor layergenerally has a columnar crystalline structure formed on the underlayerby vapor deposition.

[0018] In vapor deposition, a phosphor is discharged in a gas form ontothe surface of a substrate from a deposition source. The phosphor comingin contact with the surface is changed into a liquid form and fixed tothe substrate in a solid form. The crystals of the phosphor growing in acolumnar structure are unstable in the vicinity of the fixing surfaceand thus, the diameter of the columnar crystals is reduced. As thecrystals grow, the columnar crystals tend to aggregate to a largerdiameter.

[0019] Since the phosphor crystals are typically grown directly on asensor panel, a small diameter of the columnar crystals at the sensorpanel side decreases the amount of light from the upper portion of thephosphor and reduces the optical output of the resulting radiationdetecting apparatus. The present invention's use of atmospheric pressureplasma treatment on the underlayer of the phosphor layer increases thewettability of the fixing surface to facilitate the spread of thecrystals over the fixing surface. Thus, the diameter of the columnarcrystals is increased in comparison with when plasma treatment is notapplied. Accordingly, the area occupied by columnar crystals having asmall diameter, which negatively affect optical output in the vicinityof the sensor panel, is reduced and a higher optical output is achieved.

[0020] Other objects and advantages besides those discussed above shallbe apparent to those skilled in the art from the description of apreferred embodiment of the invention which follows. In the description,reference is made to accompanying drawings, which form a part thereof,and which illustrate an example of the invention. Such example, however,is not exhaustive of the various embodiments of the invention, andtherefore reference is made to the claims which follow the descriptionfor determining the scope of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

[0021]FIGS. 1A to 1C are sectional views showing the process steps formanufacturing a radiation detecting apparatus according to a firstembodiment of the present invention.

[0022]FIGS. 2A to 2D are sectional views showing the process steps formanufacturing a radiation detecting apparatus according to a secondembodiment of the present invention.

[0023]FIG. 3 is a diagram illustrating a radiodiagnosis system using aradiation detecting apparatus according to the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0024] Embodiments of the present invention will now be described withreference to the drawings.

First Embodiment

[0025]FIGS. 1A to 1C are sectional views showing the process steps formanufacturing a radiation detecting apparatus according to a firstembodiment of the present invention.

[0026] As shown in FIG. 1A, a sensor panel 100 includes: an insulativeglass substrate 101; photoelectric conversion devices 102, eachincluding an amorphous silicon photosensor and a TFT; wires 103;lead-out portions 104; and a passivation layer 105 of, for example,silicon nitride, which is provided to cover the photoelectric conversiondevices 102. A resin underlayer 111 of a phosphor layer 112 lies on thesensor panel 100. The underlayer 111 doubles as a protective layer forprotecting the stiffness of the photoelectric conversion devices 102.The photoelectric conversion devices 102 are two-dimensionally arrangedcorresponding to pixels. The passivation layer 105 and the underlayer111 may be referred to as a first protective layer and a secondprotective layer, respectively.

[0027] A surface of the underlayer 111 on the sensor panel 100 issubjected to atmospheric pressure plasma treatment. An apparatus usedfor performing such atmospheric pressure plasma treatment changes argonand oxygen gases into plasma gas, where the plasma gas is sprayed ontothe surface from a nozzle 121 of the apparatus to clean and reform thesurface, as published in Matsushita Electric Works Technical Report,Apr., 2000, pp. 13-17. In one example of the present invention, Aiplasmamanufactured by Matsushita Electric Works was used as the atmosphericpressure plasma treatment apparatus.

[0028] Treatment conditions must be appropriately set according to thecharacteristics of the panel, in order to prevent damages to thephotoelectric conversion devices and the wires. Preferably, theabove-described treatment is performed at a power output of 0.9 kW and anozzle speed in the range of 10 to 150 mm/s, ideally 30 to 120 mm/s.Atmospheric pressure plasma treatment under such conditions gives thesurface of the underlayer 111 a surface energy of at least 45×10⁻³ J/m².The surface energy is determined by a wettability test in accordancewith JIS K 6768. A nozzle speed of less than 10 mm/s is likely to damagethe sensor panel, due to increased noise and chance of defect. A nozzlespeed of less than 30 mm/s makes the surface of the underlayer 111rough, consequently causing a defect in the phosphor layer 112, which isformed on the underlayer 111 in a subsequent step. In contrast, a nozzlespeed of more than 120 mm/s does not give the underlayer 111 sufficientsurface energy. In order to enhance the adhesion between the phosphorlayer 112 and the underlayer 111, the end portions of the underlayer111, which are particularly subjected to peeling stress, aresurface-treated. Thus, an adhesion strength sufficient to reduce defectsis obtained. Otherwise, the end portions of the phosphor layer 112,which are formed by vapor deposition and are thin and unstable, arelikely to peel due to stress from each layer in an endurance test. It istherefore preferable that the end areas within 5 mm or more from theedges of the underlayer be surface-treated. In particular, atmosphericpressure plasma treatment can be applied to a delimited region.Preferably, how the treatment is applied is based upon the delimitedregion. For example, only the end portions may be treated, or treatmentconditions for the end portions may be changed to enhance the adhesionthere. The treatment of the underlayer allows a deposited phosphor tospread stably over the landing surface. Consequently, the phosphor formscolumnar crystals with a larger diameter in the vicinity of the sensorpanel 100 in comparison with when treatment is not applied and thus,optical output is enhanced. It is therefore preferable that theunderlayer 111 be subjected to the treatment over the entire surface(see FIG. 1A).

[0029] Turning to FIG. 1B, an alkali halide columnar crystallinephosphor (for example, CsI:Tl, thallium-activated cesium iodide) isvapor-deposited on the underlayer 111 to form a phosphor layer 112. Theentire top and side surfaces of the phosphor layer 112 are covered witha moisture-resistant protective layer 113 and further a reflection layer114, as shown in FIG. 1C. By providing the moisture-resistant protectivelayer 113 between the phosphor layer 112 and the reflection layer 114,the reflection layer 114 is prevented from being negatively affected bythe constituents and water in the phosphor layer 112. Then, anotherprotective layer 115 is provided to cover the entire reflection layer114, and the ends of all the protective layers are covered with asealing resin 116. The protective layers and the sealing resin 116prevent external water and the like from negatively affecting thereflection layer 114 and the phosphor layer 112.

[0030] In addition, a PET/Al foil/adhesive composite may be providedover the protective layer 115 to further enhance moisture-resistance.

[0031] In the present embodiment, the present invention produces thehighest optical output when the columnar crystalline phosphor layer 112,whose optical output depends on the control of the state of thecrystals, is vapor-deposited.

[0032] Exemplary material of the passivation layer 105 includesinorganic materials, such as SiN, TiO₂, LiF, Al₂O₃, and MgO; and resins,such as polyphenylene sulfide, fluorocarbon, poly(ether-ether-ketone),liquid crystal polymer, polyethernitrile, polysulfone, polyethersulfone,polyarylate, polyamide-imide, polyetherimide, polyimide, epoxy, andsilicone. Since the passivation layer 105 transmits light converted inthe phosphor layer 112 during radiation exposure, a material ispreferable which has a high transmittance for the wavelength of lightemitted from the phosphor layer 112.

[0033] The underlayer 111 may be formed of any material as long as it isresistant to heating at 200° C. or more for forming the phosphor layer112. Exemplary underlayer materials include polyamide-imide,polyetherimide, polyimide, polyurea, benzocyclobutene, highlyheat-resistant acrylic resin, epoxy resin, and silicone resin.

[0034] The reflection layer 114 is preferably formed of a metal with ahigh reflectance, such as Al, Ag, Cr, Cu, Ni, Ti, Mg, Rh, Pt, and Au.

[0035] The moisture-resistant protective layer 113 covering the entiretyof the underlayer 111 and phosphor layer 112 may be formed of anymaterial, as long as it can block moisture and protect the underlyinglayers. Preferably, a highly moisture-resistant organic material, suchas poly(p-xylene), is deposited by CVD, as disclosed in U.S. Pat. No.6,469,305. If the adhesion between the underlayer 111 and themoisture-resistant protective layer 113 is not sufficient, water in theair can permeate from their interface and cause, for example, thecolumnar crystalline CsI to deliquesce. However, when theabove-described organic layer is used as the moisture-resistantprotective layer 113, which comes in contact with the underlayer 111 inthe periphery of the CsI phosphor layer, thus covering the structure inwhich the CsI layer is formed on the surface subjected to atmosphericpressure plasma treatment of the underlayer 111, the moisture resistanceat the interface between the underlayer 111 and the moisture-resistantprotective layer 113 is advantageously enhanced.

[0036] For the phosphor layer 112, an activator-added alkali halide ispreferably used. In addition to above-described CsI:Tl, exemplaryphosphors include Na-activated CsI (CsI:Na), Tl-activated NaI (NaI:Tl),Eu-activated LiI (LiI:Eu), and Tl-activated KI (KI:Tl).

[0037] The present embodiment has illustrated a radiation detectingapparatus including a photo-detector having photoelectric conversiondevices formed on a glass substrate, each including an amorphous siliconphotosensor and a TFT. However, the radiation detecting apparatus of thepresent invention may have the structure in which the underlayer and thephosphor layer lie over a semiconductor crystal substrate includingtwo-dimensionally arranged imaging elements, such as CCD or CMOSsensors.

Second Embodiment

[0038] The radiation detecting apparatus of the present invention mayinclude a sensor panel having two-dimensionally arranged photoelectricconversion devices and a scintillator panel that are bonded together.The scintillator panel includes an underlayer of a phosphor layer over asubstrate, where the phosphor layer is in contact with the underlayer.The surface of the underlayer contacting the phosphor layer is subjectedto atmospheric pressure plasma treatment. The adhesion of the underlayerto the phosphor layer can be enhanced, and the diameter of the columnarcrystals in the phosphor layer can be controlled, in the same manner aswhen the underlayer on the sensor panel is surface-treated.

[0039]FIGS. 2A to 2D are sectional views showing process steps formanufacturing a radiation detecting apparatus according to a secondembodiment of the present invention.

[0040]FIG. 2A shows a sensor panel 100 of the radiation detectingapparatus. The sensor panel 100 includes an insulative glass substrate101, photoelectric conversion devices 102, each including an amorphoussilicon photosensor and a TFT, wires 103, lead-out portions 104, and apassivation layer 105 of, for example, silicon nitride.

[0041] On the other hand, a protective layer 118, a reflection layer114, and an underlayer 111 of a phosphor layer 112 are deposited in thatorder on a substrate 117, as shown in FIG. 2B. The underlayer 111 issurface-treated by the same atmospheric pressure plasma treatment as inthe first embodiment. A columnar crystalline phosphor layer 112 isformed on the surface-treated underlayer 111, and covered with amoisture-resistant protective layer 113. Thus, a scintillator panel 110is completed, as shown in FIG. 2C.

[0042] The scintillator panel 110 is bonded to the sensor panel 100 withan adhesive layer 119, followed by sealing with a sealing resin 116, asshown in FIG. 2D.

[0043] The substrate 117 of this radiation detecting apparatus is formedof a material commonly used as the phosphor panel substrate of aradiation detecting apparatus. Exemplary substrates include Al, glassfused quartz, and amorphous carbon substrates, an amorphouscarbon-containing substrate, and a heat-resistant resin substrate, suchas that of polyimide or polybenzoimidazole. Amorphous carbon isparticularly suitable for the substrate because it absorbs X-rays lessthan and transmits X-rays more than glass and Al.

Third Embodiment

[0044]FIG. 3 is a representation of a radiodiagnosis system using aradiation detecting apparatus, according to a third embodiment of thepresent invention.

[0045] X-rays 6060 generated from an x-ray tube 6050 pass through thechest 6062 of a test subject 6061, and enter a radiation detectingapparatus 6040 as shown in FIGS. 2A to 2D. The incoming X-rays includein-vivo information of the subject 6061. The phosphor layer emits lightaccording to the incoming X-rays. The light is converted into electricalsignals in the photoelectric conversion devices of the sensor panel and,thus, electrical information is obtained. This information is convertedinto digital information, and is subsequently processed into an image byan image processor 6070. The image is shown on a display 6080 in acontrol room.

[0046] The information can be transferred to a remote site throughtransmitting means, such as a telephone line 6090. Thus, the informationcan be shown on a display 6081 in a doctor's room apart from the controlroom or stored in recording means, such as an optical disk, which allowsa remote doctor to diagnose the information. The information may berecorded on a film 6110 with a film processor 6100 or other recordingmeans.

[0047] The present invention can be applied to a medical X-ray sensor,as described above, and can also be used in other applications, such asnondestructive test.

EXAMPLES

[0048] The radiation detecting apparatus of the present invention willbe further described according to the following examples.

[0049] As shown in FIG. 1A, photoelectric conversion devices 102, eachincluding a photosensor and a TFT, and wires 103 were formed on anamorphous silicon semiconductor layer on a glass substrate 101. Then, aSiN passivation layer 105 was provided over photoelectric conversiondevices 102. Thus, a sensor panel 100 was prepared. A polyimideunderlayer 111 was then formed on the passivation layer 105.

[0050] The underlayer 111 on the sensor panel 100 was surface-treated byatmospheric pressure plasma treatment under the conditions shown inTable 1. Then, an alkali halide columnar crystalline phosphor wasvapor-deposited to form a phosphor layer 112 on the surface of theunderlayer 111, as shown in FIGS. 1B and 1C. P-xylene moisture-resistantprotective layer 113 was formed by CVD so as to cover the entire top andside surfaces of the phosphor layer 112. Al was vapor-deposited to areflection layer 114 and another p-xylene protective layer 115 wasformed so as to cover the entire reflection layer 114. Finally, asealing resin 116 was applied so as to cover the ends of the protectivelayers, thus, completing a radiation detecting apparatus.

[0051] In Examples 1 to 5, each phosphor layer 112 was precisely formed,accordingly resulting in a radiation detecting apparatus with highuniformity.

[0052] The resulting radiation detecting apparatuses were allowed tostand in a temperature-humidity test bath of 60° C. in temperature and90% in humidity for 1,000 hours. The results are shown in Table 1. InExamples 1 to 3, atmospheric pressure plasma treatment was applied underdifferent conditions. In Examples 4 and 5, the underlayer was formed ofbenzocyclobutene and an acrylic resin, respectively, instead ofpolyimide. TABLE 1 Example Example Example Example Example ComparativeComparative Comparative Comparative 1 2 3 4 5 example 1 example 2example 3 example 4 Underlayer Polyimide Benzocyclobutene PolyimideThickness: 5 μm Thickness: 5 μm Thickness: 5 μm Curing temperature:Curing Curing temperature: 230° C. 3 h temperature: 240° C. 3 h 250° C.4 h Nozzle 30 75 140 75 140 — 5 mm/sec 75 mm/sec 180 mm/sec speed mm/secmm/sec mm/sec mm/sec mm/sec Surface- Entire Entire Entire Entire Entire— Entire Within 10 mm Entire treated surface surface surface surfacesurface surface from edges surface region Peeling of No No No No No Yes— No Yes phosphor Defect in No No No No No No Yes No No sensor panelOptical 1.2 1.2 1.2 1.3 1.2 1 — 1 1 output

[0053] 1. Peeling of the Phosphor Layer

[0054] After the endurance test at a temperature of 60° C. and ahumidity of 90% for 1,000 hours, the radiation detecting apparatus wereexposed to X-rays to form radiographic images. Using the radiographicimages, it was observed whether there was any defect in the phosphorlayer, such as peeling or fracture.

[0055] 2. Optical Output

[0056] Optical output was evaluated with radiographs taken by exposing awater phantom of 100 mm in thickness to X rays with a tube voltage of100 kV. The values shown in the table represent sensitivities relativeto the sensitivity of Comparative Example 1.

[0057] 3. Defect in the Sensor Panel

[0058] After plasma treatment, it was examined whether there was anydefect, such as a broken wire or nonuniform noise, in the sensor panel.

[0059] As described above, the present invention produces the followingeffects:

[0060] (1) A scintillator panel and a radiation detecting apparatuswhich have a phosphor layer constituted of uniformly shaped crystals andexhibit uniform sensitivity.

[0061] (2) The phosphor layer of the resulting scintillator panel or aradiation detecting apparatus does not peel or fracture and, thus,particularly the temperature-humidity resistance is enhanced.

[0062] While the present invention has been described with reference towhat are presently considered to be the preferred embodiments, it is tobe understood that the invention is not limited to the disclosedembodiments. On the contrary, the invention is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims. The scope of the following claims is to beaccorded the broadest interpretation so as to encompass all suchmodifications and equivalent structures and functions.

What is claimed is:
 1. A method for manufacturing a radiation detectingapparatus including a sensor panel having two-dimensionally arrangedphotoelectric conversion devices and a phosphor layer disposed over thesensor panel, wherein the phosphor layer converts a radiation into lightcapable of being sensed by the photoelectric conversion devices, themethod comprising the steps of: applying an atmospheric pressure plasmatreatment to a surface of an underlayer, wherein the underlayer isprovided over the sensor panel; and forming the phosphor layer on thesurface of the underlayer.
 2. A method according to claim 1, furthercomprising the step of covering the phosphor layer with amoisture-resistant protective layer.
 3. A method according to claim 2,wherein the moisture-resistant protective layer comprises an organicfilm.
 4. A method according to claim 1, wherein the underlayer has asurface energy of 45×10⁻³ J/m² or more after the atmospheric pressureplasma treatment.
 5. A method according to claim 1, wherein theunderlayer comprises a highly heat-resistant resin.
 6. A methodaccording to claim 1, wherein the underlayer comprises a polyimide.
 7. Amethod according to claim 1, wherein the step of forming the phosphorlayer is performed by vapor deposition.
 8. A method according to claim1, wherein the step of forming the phosphor layer is performed byvapor-depositing an activator-added alkali halide.
 9. A method formanufacturing a scintillator panel having a phosphor layer disposed overa substrate, wherein the phosphor layer converts a radiation into lightcapable of being sensed by a photoelectric conversion device, the methodcomprising the steps of: applying an atmospheric pressure plasmatreatment to a surface of an underlayer, wherein the underlayer isprovided over the substrate; and forming the phosphor layer on thesurface of the underlayer.
 10. A method according to claim 9, furthercomprising the step of covering the phosphor layer with amoisture-resistant protective layer.
 11. A method according to claim 10,wherein the moisture-resistant protective layer comprises an organicfilm.
 12. A method according to claim 9, wherein the underlayer has asurface energy of 45×10⁻³ J/m² or more after the atmospheric pressureplasma treatment.
 13. A method according to claim 9, wherein theunderlayer comprises a highly heat-resistant resin.
 14. A methodaccording to claim 9, wherein the underlayer comprises a polyimide. 15.A method according to claim 9, wherein the step of forming the phosphorlayer is performed by vapor deposition.
 16. A method according to claim9, wherein the step of forming the phosphor layer is performed byvapor-depositing an activator-added alkali halide.
 17. A method formanufacturing a radiation detecting apparatus having a sensor panel withtwo-dimensionally arranged photoelectric conversion devices and ascintillator panel on the sensor panel, wherein the scintillator panehas a phosphor layer for converting a radiation into light capable ofbeing sensed by the photoelectric conversion devices, the methodcomprising the steps of: applying an atmospheric pressure plasmatreatment to a surface of an underlayer, wherein the underlayer isprovided over a substrate; forming the phosphor layer on the surface ofthe underlayer to prepare the scintillator panel; and bonding the sensorpanel to the scintillator panel.
 18. A radiation detecting apparatuscomprising: a sensor panel including two-dimensionally arrangedphotoelectric conversion devices; an underlayer disposed over the sensorpanel, wherein the underlayer has a surface subjected to an atmosphericpressure plasma treatment; and a phosphor layer disposed on theunderlayer.
 19. A scintillator panel for converting a radiation intolight capable of being sensed by a photoelectric conversion device, thescintillator panel comprising: an underlayer disposed over a substrate,wherein the underlayer has a surface subjected to atmospheric pressureplasma treatment; and a phosphor layer disposed on the underlayer.
 20. Aradiation detecting apparatus comprising: a sensor panel havingtwo-dimensionally arranged photoelectric conversion devices; ascintillator panel as set forth in claim 19; and an adhesive layerbonding the sensor panel to the scintillator panel.
 21. A radiationdetecting system comprising the radiation detecting apparatus as setforth in claim
 18. 22. A radiation detecting system comprising theradiation detecting apparatus as set forth in claim 20.